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Home Desktops & Monitors PC components Solid State Drive (SSD) SAMSUNG SSD 990 EVO 1TB M.2 NVMe PCIe

SAMSUNG SSD 990 EVO 1TB M.2 NVMe PCIe

Code:
MZ-V9E1T0BW
Brand:

Features

  • EAN Code:
    8806095300276
The Samsung 990 EVO solid state drive combines speed, capacity, and security to offer a reliable storage solution. With a 1 TB capacity, it provides ample space for all your storage needs. The drive has impressive read speeds of up to 5000 MBps and write speeds of up to 4200 MBps, ensuring quick boot times and fast access to your data. It features PCI Express 4.0 x4 and PCI Express 5.0 x2 interfaces for versatile and high-speed connectivity. Security is a priority, with 256-bit AES hardware encryption and TCG Opal Encryption 2.0 safeguarding your sensitive data. Additionally, the Dynamic Thermal Guard protection prevents overheating, maintaining reliable performance. Whether for work or play, the Samsung 990 EVO is designed to meet the demands of high-performance computing environments.
Price: 19363лв.

Sold out, upon order can be delivered in 7 days

  • Width:
    22 мм
  • Height:
    2.38 мм
  • Depth:
    80 мм
  • Nominal weight:
    9 г
  • Warranty products - subject to return:
    Да
  • Warranty terms (month):
    60 мес.
  • Criteria for warranty validity:
    Сериен номер
  • Package Weight - Gross (kg):
    0.1 кг
  • Number per pack:
    1
  • Carton Weight - Gross (kg):
    1 кг
  • Packages in a carton:
    10
  • EAN code:
    8806095300276
  • Package type:
    С опаковка
  • Retail Packaging Net Weight Carton:
    0.1 кг
  • Retail Packaging Net Weight Plastic:
    0.1 кг
  • Package Weight - Net (kg):
    0.1 кг
  • Device location:
    Вътрешен
  • EAN Code:
    8806095300276
  • Maximum ambient temperature:
    70 °C
  • Minimum ambient temperature:
    0 °C
  • Maximum energy consumed:
    5.9 W/cm^2
  • Minimal energy consumption:
    4.5 W
  • Software included:
    Magician Software
  • Mean time between failures:
    1500000 ч.
  • Capacity of a data storage device:
    1 TB
  • Supported data channel:
    PCI-Express
  • Impact resistance when working:
    1500G @ 0.5ms
  • Rated supply voltage:
    3.3 V
  • Maximum Sequential Read Rate:
    5000 MB/s
  • Flash memory technology:
    Triple-Level Cell
  • Memory technology:
    NAND Flash
  • :
    M.2 22x80mm
  • :
    4200 MB/s
  • :
    S.M.A.R.T.<br/>TRIM Support<br/>AES 256-bit Encryption<br/>Auto Garbage Collection
  • :
    800000 IOPS
  • :
    20000 IOPS
  • :
    1200 TB